low frequency transistor t he transistor of 500ma class w h ich w ent only into 2125 size conventionally w a s att a ined in 1608 sizes or 1208 sizes. z a pplic a t ions for sw itching, for muting. z f eatu r es 1) a collector current is large. 2) collector saturation volt age is low . v ce (sa t ) 250ma at i c = ? 200ma / i b = ? 10ma z a b solute maximum ratings (t a= 25 c) parameter symbol v cbo v ceo p c tstg limits ? 15 ? 12 150 ? 55 to + 150 unit v v mw c c collector-base voltage collector-emitter voltage v ebo ? 6v emitter-base voltage collector power dissipation storage temperature i c i cp ? 500 ? 1 ? ma a collector current tj 150 junction temperature ? single pulse, pw = 1ms z electrical ch aracteristics (t a= 25 c) parameter collector-base breakdown voltage symbol min. typ. max. unit conditions bv cbo ? 15 ?? vi c = ? 10 a i c = ? 1ma i e = ? 10 a v cb = ? 15v i c = ? 200ma / i b = ? 10ma v ce = ? 2v / i c = ? 10ma v ce = ? 2v, i e = 10ma, f t = 100mhz v cb = ? 10v, i e = 0a, f = 1mhz collector-emitter breakdown voltage bv ceo ? 12 ?? v emitter-base breakdown voltage bv ebo ? 6 ?? v collector cutoff current i cbo ?? ? 100 na v eb = ? 6v emitter cutoff current i ebo ?? ? 100 na collector-emitter saturation voltage v ce (sat) ?? 100 ? 250 mv dc current transfer ratio h fe 270 ? 680 ? transition frequency f t ? 260 ? mhz output capacitance cob ? 6.5 ? pf l2sa2030m3t5g sot ?723 1 leshan radio company, ltd. device marking shipping 8000/tape&reel l2sa2030m3t5g z device marking and ordering information bw 2 emitter 3 collector 1 base pnp we declare that the material of product compliance with rohs requirements. 3) 2 3 rev.o 1/3
electrical ch aracteristic cu rv es 1 2 5 10 20 50 100 200 500 1000 0 0.5 1.0 1.5 base to emitter voltage : v be (v) collector current : i c (ma) v ce = 2v fig.1 grounded emitter propagation characteristics ta = ? 40 c ta = 25 c ta = 125 c 1 2 5 10 20 50 100 200 500 1000 1 2 5 1 0 2 0 5 0 100 200 500 1000 collector current : i c (ma) dc current gain : h fe v ce = 2v fig.2 dc current gain vs. collector current ta = ? 40 c ta = 25 c ta = 125 c 1 2 5 10 20 50 100 200 500 1000 1 2 5 1 0 2 0 5 0 100 200 500 1000 collector current : i c (ma) i c / i b = 20 ta = ? 40 c ta = 25 c ta = 125 c collector saturation voltage : v ce (sat) (v) fig.3 collector-emitter saturation voltage vs. collector current ( ) 1 2 5 10 20 50 100 200 500 1000 1 2 5 1 0 2 0 5 0 100 200 500 1000 collector current : i c (ma) ta = 25 c i c / i b = 50 i c / i b = 20 i c / i b = 10 fig.4 collector-emitter saturation voltage vs. collector current ( ? ) collector saturation voltage : v ce (sat) (mv) 10 20 50 100 200 500 1000 2000 5000 10000 1 2 5 1 0 2 0 5 0 100 200 500 1000 collector current : i c (ma) i c / i b = 20 ta = 125 c ta = 25 c ta = ? 40 c baser saturation voltage : v be (sat) (mv) fig.5 base-emitter saturation voltage vs.collecter current 1 2 5 10 20 50 100 200 500 1000 1 2 5 1 0 2 0 5 0 100 200 500 1000 emitter current : i c (ma) transition frequency : f t (mhz) v ce = 2v ta = 25 c fig.6 gain bandwidth product vs. emitter current 1 2 5 10 20 50 100 200 500 1000 0.1 0.2 0.5 1 2 5 1 0 2 0 5 0 100 emitter to base voltage : v eb (v) i e = 0a f = 1mhz ta = 25 c fig.7 collector output capacitance vs. collector-base voltage emitter input capacitance vs. emitter-base voltage cib cob emitter input capacitance : cib ( pf ) collector output capacitance : cob ( pf ) leshan radio company, ltd. l2sa2030m3t5g rev.o 2/3
dim min nom max millimeters a 0.45 0.50 0.55 b 0.15 0.21 0.27 b1 0.25 0.31 0.37 c 0.07 0.12 0.17 d 1.15 1.20 1.25 e 0.75 0.80 0.85 e 0.40 bsc h 1.15 1.20 1.25 l 0.15 0.20 0.25 0.018 0.020 0.022 0.0059 0.0083 0.0106 0.010 0.012 0.015 0.0028 0.0047 0.0067 0.045 0.047 0.049 0.03 0.032 0.034 0.016 bsc 0.045 0.047 0.049 0.0059 0.0079 0.0098 min nom max inches e notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeters. 3. maximum lead thickness includes lead finish. minimum lead thickness is the minimum thickness of base material. 4. dimensions d and e do not include mold flash, protrusions or gate burrs. d b1 e b e a l c h ?y? ?x? x 0.08 (0.0032) y 2x e 1 2 3 xx = specific device code m = date code generic marking diagram* xx m style 1: pin 1. base 2. emitter 3. collector style 2: pin 1. anode 2. n/c 3. cathode style 3: pin 1. anode 2. anode 3. cathode style 4: pin 1. cathode 2. cathode 3. anode soldering footprint for sot?723 1.0 0.039 mm inches scale 20:1 0.40 0.0157 0.40 0.0157 0.40 0.0157 0.40 0.0157 0.40 0.0157 sot?723 1 *this information is generic. please refer to device data sheet for actual part marking. pb?free indicator, ago, may or not be present. leshan radio company, ltd. l2sa2030m3t5g rev.o 3/3
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